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Freescale Semiconductor Technical Data
Document Number: MRF6S27015N Rev. 0, 8/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14 dB Drain Efficiency -- 22% ACPR @ 5 MHz Offset -- - 45 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * 200C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MRF6S27015NR1 MRF6S27015GNR1
2300- 2700 MHz, 3 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF6S27015NR1
CASE 1265A - 02, STYLE 1 TO - 270- 2 GULL PLASTIC MRF6S27015GNR1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +175 200 Unit Vdc Vdc C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 7.5 W Avg., Two - Tone Case Temperature 79C, 3 W CW Symbol RJC Value (1,2) 2.0 2.2 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S27015NR1 MRF6S27015GNR1 1
RF Device Data Freescale Semiconductor
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 40 Adc) Gate Quiescent Voltage (1) (VDS = 28 Vdc, ID = 160 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 0.4 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 11.6 0.02 -- -- pF pF VGS(th) VGS(Q) VDS(on) 1.5 2 -- 2.2 2.8 0.4 3.5 3.5 0.33 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 500 Adc Adc nAdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 160 mA, Pout = 3 W Avg., f = 2600 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps D ACPR IRL 12.5 19 -- -- 14 22 - 45 - 18 16 -- - 42 -9 dB % dBc dB
1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally input matched.
MRF6S27015NR1 MRF6S27015GNR1 2 RF Device Data Freescale Semiconductor
R1 VBIAS + C11 R2 C1 C2 Z7 Z18 RF INPUT R3 Z1 C3 Z2 Z3 Z4 Z5 Z6 DUT Z19 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 C6 Z17 C4 C7 C8 RF OUTPUT VSUPPLY
VSUPPLY C5 C9 C10
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.503 x 0.066 Microstrip 0.905 x 0.066 Microstrip 0.371 x 0.300 x 0.049 Taper 0.041 x 0.016 Microstrip 0.245 x 0.851 Microstrip 0.248 x 0.851 Microstrip 0.973 x 0.050 Microstrip 0.085 x 0.485 Microstrip 0.091 x 0.667 Microstrip 0.138 x 0.816 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB
0.143 x 0.816 Microstrip 0.101 x 0.667 Microstrip 0.073 x 0.485 Microstrip 0.120 x 0.021 Microstrip 0.407 x 0.170 Microstrip 0.714 x 0.066 Microstrip 0.496 x 0.066 Microstrip 0.475 x 0.050 Microstrip 0.480 x 0.050 Microstrip Taconic RF - 35, 0.030, r = 3.5
Figure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic Table 6. MRF6S27015NR1(GNR1) Test Circuit Component Designations and Values
Part C1 C2 C3 C4, C5, C6 C7, C8, C9, C10 C11 R1 R2 R3 Description 100 nF Chip Capacitor 4.7 pF Chip Capacitor 9.1 pF Chip Capacitor 8.2 pF Chip Capacitors 10 F, 50 V Chip Capacitors 10 F, 35 V Tantalum Chip Capacitor 1 K, 1/4 W Chip Resistor 10 K,1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number CDR33BX104AKWS 600B4R7BT250XT 600B9R1BT250XT 600B8R2BT250XT GRM55DR61H106KA88L T491D106K035AS CRCW12061001F100 CRCW12061002F100 CRCW120610R0F100 Manufacturer AVX ATC ATC ATC Murata Kemet Vishay Vishay Vishay
MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 3
C11
R2 R1
C1
C2
C4 C7 C8
R3
C3 CUT OUT AREA
C6
C9 C5 MRF6S27015N Rev. 3
C10
Figure 2. MRF6S27015NR1(GNR1) Test Circuit Component Layout
MRF6S27015NR1 MRF6S27015GNR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
16 15 14 Gps, POWER GAIN (dB) 13 12 11 10 9 ALT1 ACPR Gps D IRL VDD = 28 Vdc, Pout = 3 W (Avg.) IDQ = 160 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 24 23 22 21 20 -30 -40 -50 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 -25 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 -25 240 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB)
8 -60 2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700 f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance @ Pout = 3 Watts Avg.
15 14 13 Gps, POWER GAIN (dB) 12 11 10 9 8 IRL ACPR ALT1 D VDD = 28 Vdc, Pout = 6 W (Avg.) IDQ = 160 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 32 31 30 29 28 -30 -40 -50
7 -60 2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700 f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance @ Pout = 6 Watts Avg.
16 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 240 mA 190 mA Gps, POWER GAIN (dB) 15 160 mA 14 130 mA -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 130 mA 160 mA 190 mA IDQ = 80 mA VDD = 28 Vdc f1 = 2595 MHz, f2 = 2605 MHz Two-Tone Measurements
13
80 mA VDD = 28 Vdc f1 = 2592 MHz, f2 = 2605 MHz Two-Tone Measurements 1 10 Pout, OUTPUT POWER (WATTS) PEP
12
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
-15 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 1 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 5th Order 3rd Order VDD = 28 Vdc, IDQ = 160 mA f1 = 2595 MHz, f2 = 2605 MHz Two-Tone Measurements, 10 MHz Tone Spacing
-25 -30 -35 -40 -45 IM5-L -50 -55 -60 1 10 TWO-TONE SPACING (MHz) 100 IM7-U IM7-L VDD = 28 Vdc, Pout = 15 W (PEP) IDQ = 160 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz IM3-U IM3-L IM5-U
Figure 7. Intermodulation Distortion Products versus Output Power
50 49 Pout, OUTPUT POWER (dBm) 48 47 46 45 44 43 42 41 40 26 27 28 29 30 31 32 P1dB = 43 dBm (20 W) P3dB = 43.7 dBm (23 W) P6dB = 44.3 dBm (27 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
Ideal
Actual VDD = 28 Vdc, IDQ = 160 mA Pulsed CW, 12 sec(on), 1% Duty Cycle f = 2600 MHz 33 34 35 36
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dBc) 50 45 40 35 30 ALT1 25 20 15 10 5 1 Pout, OUTPUT POWER (WATTS) AVG. 10 Gps ACPR D -45 -50 -55 -60 -65 VDD = 28 Vdc, IDQ = 160 mA, f = 2600 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) -20 -25 -30 -35 -40 ACPR (dBc), ALT1 (dBc)
Figure 10. Single - Carrier W - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S27015NR1 MRF6S27015GNR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
18 17 Gps, POWER GAIN (dB) 16 25_C 15 14 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc IDQ = 160 mA f = 2600 MHz 85_C Gps TC = -30_C -30_C 25_C 85_C
64 56 Gps, POWER GAIN (dB) 48 40 32 24 16 8 0 D, DRAIN EFFICIENCY (%)
15 IDQ = 160 mA f = 2600 MHz 14
13
12 VDD = 24 V 28 V 32 V
11
10 5 10 15 20 25 30 Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
25 VDD = 28 Vdc, IDQ = 160 mA WiMAX, 802.16, 64 QAM 3/4, 4 Bursts 7 MHz Channel Bandwidth, f = 2600 MHz 3 EVM, ERROR VECTOR MAGNITUDE (%) MTTF FACTOR (HOURS x AMPS2) 109
Figure 12. Power Gain versus Output Power
20 D, DRAIN EFFICIENCY (%)
2.5
108
15
2
107
10 D 5 EVM
1.5
106
1 0.5
0 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Pout, OUTPUT POWER (dBm)
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 13. Drain Efficiency and Error Vector Magnitude versus Output Power
Figure 14. MTTF Factor versus Junction Temperature
MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 7
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -ACPR in 3.84 MHz Integrated BW
3.84 MHz Channel BW
-ACPR in 3.84 MHz Integrated BW
Figure 15. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal
-3.6 -1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 16. Single - Carrier W - CDMA Spectrum
MRF6S27015NR1 MRF6S27015GNR1 8 RF Device Data Freescale Semiconductor
f = 2700 MHz Zload
Zo = 5
f = 2500 MHz f = 2700 MHz f = 2500 MHz
Zsource
VDD = 28 Vdc, IDQ = 160 mA, Pout = 3 W Avg. f MHz 2500 2525 2550 2575 2600 2625 2650 2675 2700 Zsource W 4.059 - j2.284 3.679 - j2.593 3.006 - j2.574 2.355 - j2.190 2.075 - j1.657 1.930 - j1.179 1.973 - j0.771 2.017 - j0.557 2.024 - j0.379 Zload W 3.380 - j0.543 3.265 - j0.546 3.077 - j0.449 2.892 - j0.336 2.727 - j0.182 2.564 - j0.034 2.435 + j0.140 2.286 + j0.340 2.227 + j0.538
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance
MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 9
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ = 160 mA, TC = 25C, 50 ohm system)
f MHz MH 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 S11 |S11| 0.984 0.984 0.986 0.987 0.987 0.986 0.985 0.985 0.984 0.983 0.982 0.981 0.980 0.978 0.976 0.974 0.970 0.966 0.960 0.953 0.945 0.933 0.918 0.901 0.879 0.850 0.815 0.775 0.734 0.700 0.683 0.687 0.710 0.741 0.774 0.805 0.832 0.855 - 178.2 - 179.0 180.0 179.0 178.1 177.3 176.5 175.8 175.1 174.5 173.8 173.2 172.5 171.9 171.2 170.5 169.8 169.0 168.3 167.5 166.6 165.8 164.9 164.1 163.2 162.5 162.2 162.5 164.0 167.0 171.0 175.1 178.5 - 179.3 - 178.2 - 177.8 - 177.9 - 178.2 |S21| 1.453 1.180 0.958 0.776 0.627 0.502 0.397 0.308 0.235 0.180 0.146 0.142 0.163 0.199 0.243 0.291 0.342 0.395 0.452 0.514 0.580 0.655 0.738 0.828 0.925 1.030 1.139 1.246 1.337 1.399 1.420 1.396 1.338 1.259 1.169 1.079 0.993 0.917 S21 39.2 36.5 34.4 33.0 32.3 32.5 34.1 37.7 44.5 56.5 75.6 98.9 118.0 129.9 136.6 140.2 141.8 142.1 141.5 140.2 138.4 135.9 132.5 128.4 123.5 117.6 110.8 102.7 93.6 83.5 73.1 62.9 53.4 45.0 37.6 31.1 25.8 21.2 |S12| 0.001 0.000 0.000 0.001 0.001 0.001 0.002 0.002 0.003 0.003 0.003 0.004 0.004 0.005 0.005 0.006 0.006 0.006 0.006 0.007 0.007 0.009 0.011 0.013 0.014 0.014 0.015 0.016 0.016 0.015 0.015 0.014 0.012 0.011 0.010 0.009 0.008 0.007 S12 - 109.8 - 121.0 159.6 118.4 106.5 104.2 96.0 95.6 94.0 91.2 91.2 89.9 89.2 88.9 87.4 86.5 86.3 84.6 84.8 86.9 92.5 100.3 93.7 83.6 75.4 69.1 62.8 55.8 48.2 40.3 33.2 26.5 22.1 19.8 19.7 19.7 19.6 22.6 |S22| 0.870 0.888 0.901 0.911 0.921 0.931 0.940 0.944 0.951 0.956 0.962 0.965 0.969 0.973 0.976 0.980 0.983 0.986 0.988 0.990 0.993 0.992 0.994 0.996 0.997 0.998 0.995 0.991 0.984 0.976 0.966 0.957 0.951 0.948 0.947 0.947 0.948 0.950 S22 - 122.3 - 127.6 - 132.0 - 135.8 - 139.1 - 142.1 - 144.8 - 147.3 - 149.5 - 151.5 - 153.4 - 155.2 - 156.8 - 158.3 - 159.8 - 161.1 - 162.4 - 163.7 - 164.9 - 166.1 - 167.3 - 168.4 - 169.4 - 170.4 - 171.6 - 172.8 - 173.9 - 175.0 - 176.0 - 176.9 - 177.6 - 178.0 - 178.3 - 178.6 - 178.9 - 179.2 - 179.5 - 179.9
MRF6S27015NR1 MRF6S27015GNR1 10 RF Device Data Freescale Semiconductor
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ = 160 mA, TC = 25C, 50 ohm system) (continued)
f MHz MH 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 S11 |S11| 0.873 0.887 0.897 0.907 0.914 0.919 0.926 0.931 0.936 0.940 0.942 0.945 0.947 0.949 0.950 0.953 0.955 - 178.8 - 179.4 - 179.9 179.6 179.1 178.8 178.3 177.9 177.4 177.0 176.6 176.3 175.8 175.6 175.1 174.8 174.5 |S21| 0.848 0.786 0.731 0.682 0.639 0.600 0.566 0.534 0.505 0.480 0.457 0.436 0.416 0.399 0.382 0.368 0.355 S21 17.2 13.7 10.6 7.9 5.5 3.3 1.3 - 0.6 - 2.2 - 3.8 - 5.2 - 6.5 - 7.6 - 8.7 - 9.6 - 10.5 - 11.5 |S12| 0.006 0.006 0.007 0.007 0.007 0.007 0.007 0.006 0.006 0.006 0.007 0.007 0.008 0.009 0.011 0.012 0.014 S12 31.2 42.2 45.6 46.5 48.0 47.0 45.8 52.1 62.3 69.8 73.2 78.7 85.1 87.9 88.2 86.9 85.1 |S22| 0.953 0.955 0.956 0.957 0.958 0.960 0.962 0.964 0.965 0.966 0.967 0.968 0.969 0.969 0.970 0.972 0.974 S22 179.7 179.2 178.7 178.2 177.8 177.2 176.8 176.2 175.7 175.2 174.7 174.2 173.8 173.2 172.9 172.6 172.1
MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 11
PACKAGE DIMENSIONS
MRF6S27015NR1 MRF6S27015GNR1 12 RF Device Data Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1 RF Device Data Freescale Semiconductor 13
MRF6S27015NR1 MRF6S27015GNR1 14 RF Device Data Freescale Semiconductor
B
E1 E4
2X
D3
2X
PIN ONE ID
L1
GAGE PLANE
aaa
M
CA e D1 L DETAIL Y
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSIONS "D" AND "E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -D-. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 L L1 b1 c1 e aaa INCHES MIN MAX .078 .082 .001 .004 .077 .088 .416 .424 .378 .382 .290 .320 .016 .024 .316 .324 .238 .242 .066 .074 .150 .180 .058 .066 .231 .235 .018 .024 .01 BSC .193 .199 .007 .011 2 8 .004 MILLIMETERS MIN MAX 1.98 2.08 0.02 0.10 1.96 2.24 10.57 10.77 9.60 9.70 7.37 8.13 0.41 0.61 8.03 8.23 6.04 6.15 1.68 1.88 3.81 4.57 1.47 1.68 5.87 5.97 4.90 5.06 0.25 BSC 4.90 5.06 0.18 0.28 2 8 0.10
D aaa
M
CA
2X
A1
b1
E bbb
M
CB
A
H
DETAIL Y
A c1 E2 E5 E5 E3
2X
A2
D
SEATING PLANE
PIN 2
D2
PIN 3
RF Device Data Freescale Semiconductor
CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC
BOTTOM VIEW
EXPOSED HEATSINK AREA PIN 1
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 1265A - 02 ISSUE B TO - 270 - 2 GULL PLASTIC MRF6S27015GN
MRF6S27015NR1 MRF6S27015GNR1 15
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MRF6S27015NR1 MRF6S27015GNR1
Rev. 16 0, 8/2006 Document Number: MRF6S27015N
RF Device Data Freescale Semiconductor

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